LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON - COMMENT

被引：10

作者：

PELLETIER, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1665 / 1666

页数：2

共 10 条

[1] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].

DONNELLY, VM ;

FLAMM, DL ;

DAUTREMONTSMITH, WC ;

WERDER, DJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252

[2]

LIGHT RW, 1984, 5TH P S PLASM PROC E, V851, P430

[3] THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS [J].

MAHI, B ;

ARNAL, Y ;

POMOT, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :657-666

[4] SF6 PLASMA-ETCHING OF SILICON - EVIDENCE OF SEQUENTIAL MULTILAYER FLUORINE ADSORPTION [J].

PELLETIER, J ;

ARNAL, Y ;

DURANDET, A .

EUROPHYSICS LETTERS, 1987, 4 (09) :1049-1054

[5] A MODEL FOR THE HALOGEN-BASED PLASMA-ETCHING OF SILICON [J].

PELLETIER, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1987, 20 (07) :858-869

[6] ANISOTROPIC ETCHING OF SILICON IN SF6 PLASMAS - A MODEL FOR PLASMA-ETCHING [J].

PETIT, B ;

PELLETIER, J .

REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (06) :377-399

[7] A PARAMETRIC STUDY OF THE ETCHING OF SILICON IN SF6 MICROWAVE MULTIPOLAR PLASMAS - INTERPRETATION OF ETCHING MECHANISMS [J].

PETIT, B ;

PELLETIER, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (06) :825-834

[8]

PETIT B, 1985, THESIS U SCI MED GRE

[9] ANISOTROPIC ETCHING OF SILICON USING AN SF6/AR MICROWAVE MULTIPOLAR PLASMA [J].

POMOT, C ;

MAHI, B ;

PETIT, B ;

ARNAL, Y ;

PELLETIER, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :1-5

[10] LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON [J].

TACHI, S ;

TSUJIMOTO, K ;

OKUDAIRA, S .

APPLIED PHYSICS LETTERS, 1988, 52 (08) :616-618

← 1 →