HEMT WITH NONALLOYED OHMIC CONTACTS USING N+-INGAAS CAP LAYER

[1] HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 191 - 192

[2] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850

[3] ISHII Y, 1984, P IEEE GAAS IC S, P121

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[5] EXTREMELY LOW CONTACT RESISTANCES FOR ALGAAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2305 - 2307

[6] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[7] KURODA S, 1984, P IEEE GAAS IC S BOS, P125

[8] PARASITIC SOURCE AND DRAIN RESISTANCE IN HIGH-ELECTRON-MOBILITY TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (07) : 659 - 668

[9] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L865 - L867

[10] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801

[1] HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J]. ELECTRONICS LETTERS, 1986, 22 (04) : 191 - 192

[2] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L847 - L850

[3] ISHII Y, 1984, P IEEE GAAS IC S, P121

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459

[5] EXTREMELY LOW CONTACT RESISTANCES FOR ALGAAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2305 - 2307

[6] ELECTRON-MICROSCOPE STUDIES OF AN ALLOYED AU/NI-AU-GE OHMIC CONTACT TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6952 - 6957

[7] KURODA S, 1984, P IEEE GAAS IC S BOS, P125

[8] PARASITIC SOURCE AND DRAIN RESISTANCE IN HIGH-ELECTRON-MOBILITY TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (07) : 659 - 668

[9] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L865 - L867

[10] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801