EFFECT OF ELECTRON-ELECTRON INTERACTIONS ON MICROWAVE PERFORMANCE OF IMPATT GAAS DIODES

被引:3
作者
PRIBETICH, J [1 ]
LEFEBVRE, M [1 ]
ALLAMANDO, E [1 ]
机构
[1] UNIV SCI & TECH LILLE,CTR HYPERFREQUENCES & SEMICONDUCTEURS,CNRS 454,ERA,F-59650 VILLENEUVE,FRANCE
关键词
D O I
10.1049/el:19760349
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:460 / 462
页数:3
相关论文
共 5 条
[1]   EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES [J].
CONSTANT, E ;
MIRCEA, A ;
PRIBETICH, J ;
FARRAYRE, A .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3934-3940
[2]   EFFECT OF ELECTRON-ELECTRON INTERACTIONS ON IONIZATION RATE OF CHARGE-CARRIERS IN SEMICONDUCTORS [J].
GHOSH, R ;
ROY, SK .
SOLID-STATE ELECTRONICS, 1975, 18 (11) :945-948
[3]   CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].
MOLL, JL ;
VANOVERSTRAETEN, R .
SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157
[4]   THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J].
SALMER, G ;
PRIBETICH, J ;
FARRAYRE, A ;
KRAMER, B .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :314-324
[5]   PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].
SHOCKLEY, W .
SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+