DIAGNOSTICS OF LOW-PRESSURE OXYGEN RF PLASMAS AND THE MECHANISM FOR POLYMER ETCHING - A COMPARISON OF REACTIVE SPUTTER ETCHING AND MAGNETRON SPUTTER ETCHING

被引：48

作者：

STEINBRUCHEL, C ^{[1
]}

CURTIS, BJ ^{[1
]}

LEHMANN, HW ^{[1
]}

WIDMER, R ^{[1
]}

机构：

[1] RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1986年 / 14卷 / 02期

关键词：

D O I：

10.1109/TPS.1986.4316516

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

引用

页码：137 / 144

页数：8

共 33 条

[1] DESIGN CRITERIA FOR UNIFORM REACTION-RATES IN AN OXYGEN PLASMA [J].

BATTEY, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :140-146

[2]

BELL AT, 1974, TECHNIQUES APPLICATI, P27

[3]

BURGGRAAF PS, 1983, SEMICOND INT, P48

[4]

CHUNG PM, 1975, ELECTRIC PROBES STAT, P14

[5] DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :353-356

[6] APPLICATION OF ELECTRON-PARAMAGNETIC-RES SPECTROSCOPY TO OXIDATIVE REMOVAL OF ORGANIC MATERIALS [J].

COOK, JM ;

BENSON, BW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2459-2464

[7] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].

DAGOSTINO, R ;

CRAMAROSSA, F ;

DEBENEDICTIS, S ;

FERRARO, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265

[8] DIRECTIONAL OXYGEN-ION-BEAM ETCHING OF CARBONACEOUS MATERIALS [J].

DEGRAFF, PD ;

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1906-1908

[9]

EVANS JF, 1984, COMMUNICATION NOV

[10]

Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

← 1 2 3 4 →