IMPROVED SURFACE MORPHOLOGY OF ALGAAS-GAAS HETEROEPITAXIAL WAFERS BY MAGNESIUM DOPING

被引：6

作者：

FUKUI, T ^{[1
]}

WAKITA, K ^{[1
]}

HORIKOSHI, Y ^{[1
]}

FURUKAWA, Y ^{[1
]}

机构：

[1] NIPPON TELEG & TELE PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 10期

关键词：

D O I：

10.1143/JJAP.15.2005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2005 / 2006

页数：2

共 9 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[2] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS
DYMENT, JC
NASH, FR
HWANG, CJ
ROZGONYI, GA
HARTMAN, RL
MARCOS, HM
HASZKO, SE
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 481 - 484
[3] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS
HORIGUCHI, M
OSANAI, H
[J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312
[4] NEW LIQUID-PHASE EPITAXIAL-GROWTH METHOD FOR GROWTH OF (ALGA)AS, GAAS MULTILAYERS
HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 887 - 888
[5] CONTINUOUS OPERATION OVER 10000-H OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASER WITHOUT LATTICE MISMATCH COMPENSATION
KAN, H
NAMIZAKI, H
ISHII, M
ITO, A
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (03) : 138 - 139
[6] THERMAL DIAGNOSIS OF DARK LINES IN DEGRADED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS
KOBAYASHI, T
KAWAKAMI, T
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) : 508 - 515
[7] IONIZATION ENERGY OF MG AND BE ACCEPTORS IN GAAS
KRESSEL, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1865 - &
[8] DEGRADATION OF (GA-SINGLE-BOND-AL)AS DOUBLE HETEROSTRUCTURE DIODE LASERS
NANNICHI, Y
HAYASHI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 126 - 132
[9] ANALYSIS OF OPTICAL SCATTERING IN DOUBLE-HETEROSTRUCTURE AND 5-LAYER HETEROSTRUCTURE (GAAL)AS-GAAS INJECTION LASERS
THOMPSON, GHB
KIRKBY, PA
WHITEAWAY, JEA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 481 - 488

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