PHOTOLUMINESCENCE STUDY OF NITROGEN IMPLANTED SILICON

被引：8

作者：

ALT, HC

TAPFER, L

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：426 / 428

页数：3

共 15 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2]

ASTAKHOV VP, 1972, PHYSICAL F ION BEAM, P79

[3] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[4] NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].

MITCHELL, JB ;

PRONKO, PP ;

SHEWCHUN, J ;

THOMPSON, DA ;

DAVIES, JA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :332-334

[5] NITROGEN AS DOPANT IN SILICON AND GERMANIUM [J].

PAVLOV, PV ;

ZORIN, EI ;

TETELBAUM, DI ;

KHOKHLOV, AF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01) :11-36

[6]

PAVLOV PV, 1966, SOV PHYS DOKL, V10, P786

[7] NITROGEN IN SILICON - TOWARDS THE IDENTIFICATION OF THE 1.1223-EV (A,B,C) PHOTOLUMINESCENCE LINES [J].

SAUER, R ;

WEBER, J ;

ZULEHNER, W .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :440-442

[8]

SAUER R, COMMUNICATION

[9] VIBRATIONAL ABSORPTION-BANDS FOR IMPLANTED NITROGEN IN CRYSTALLINE SILICON [J].

STEIN, HJ .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :296-298

[10] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS [J].

SUMINO, K ;

YONENAGA, I ;

IMAI, M ;

ABE, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5016-5020

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