MOS C-TERT EVALUATION OF REACTIVE ION ETCHED SILICON SUBSTRATE

被引：15

作者：

OZAKI, Y

IKUTA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.1526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1526 / 1531

页数：6

共 17 条

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[2] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[3] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[4] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[5]

FRIESER RG, 1982, 4TH P S DRY PROC TOK, P57

[6] DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION [J].

HIRATA, K ;

OZAKI, Y ;

ODA, M ;

KIMIZUKA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1323-1331

[7] CL2-AR PLASMA-ETCHING OF A CONTAMINATED LAYER ON SI INDUCED BY FLUOROCARBON GAS PLASMA [J].

HORIIKE, Y ;

SUGAWARA, T ;

OKANO, H ;

SHIBAGAKI, M ;

UEDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :803-804

[8] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[9] FABRICATION OF DEEP SQUARE-WAVE STRUCTURES WITH MICRON DIMENSIONS BY REACTIVE SPUTTER ETCHING [J].

LEHMANN, HW ;

WIDMER, R .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :163-165

[10] DEFECT-FREE REACTIVE ION ETCHING OF SILICON BY SIF4/CL2 PLASMA [J].

MATSUMOTO, H ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (06) :963-967

← 1 2 →