DEFECT MICROSTRUCTURE IN LOW-TEMPERATURE EPITAXIAL SILICON GROWN BY RPCVD

被引:10
作者
HSU, T
BREAUX, L
ANTHONY, B
BANERJEE, S
TASCH, A
机构
[1] Microelectronics Research Center, The University of Texas at Austin, Austin, 78712, TX
关键词
chemical vapor deposition; crystal defects; Low-temperature epitaxy; remote-plasma;
D O I
10.1007/BF02651300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Defect characterization of epitaxial silicon films grown by low temperature remote plasmaenhanced chemical vapor deposition (RPCVD) under various conditions is discussed. The film morphology and crystallinity have been examined by defect etching/Nomarski optical microscopy and transmission electron microscopy. Prior to epitaxial growth, an ex situ wet chemical clean and an in situ remote hydrogen plasma clean were performed to remove the native oxide as well as other surface contaminants such as carbon. A damage-free (100) Si surface with extremely low concentrations of carbon and oxygen as confirmed by in situ Auger electron spectroscopy can be achieved using this cleaning technique at temperatures as low as 250°. Low temperature Si homoepitaxy was achieved by RPCVD on lightly doped (100) Si substrates. Growth parameters such as silane flow rate (partial pressure), chamber pressure, and substrate temperature were varied during epitaxial growth to investigate the dependence of film quality on these parameters. For comparison, in situ remote hydrogen plasma and epitaxial growth were also performed on heavily doped p-type (100) Si substrates. Finally, the results of epitaxial growth at temperatures as low as 150° are presented. © 1990 The Mineral,Metal & Materials Society,Inc.
引用
收藏
页码:375 / 384
页数:10
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