BULK ELECTROMIGRATION RELIABILITY TESTS OF LARGE-GRAINED ALUMINUM LINES WITH REGARD TO SEMICONDUCTOR CONTACTS

被引：8

作者：

SCHREIBER, HU

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90010-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：893 / 901

页数：9

相关论文

共 13 条

[1] MEASUREMENT OF STRESS GRADIENTS GENERATED BY ELECTROMIGRATION
BLECH, IA
TAI, KL
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 387 - 389
[2] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE
BLECH, IA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208
[3] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823
[4] D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108
[5] ELECTROMIGRATION-INDUCED FAILURE BY EDGE DISPLACEMENT IN FINE-LINE ALUMINUM-0.5-PERCENT COPPER THIN-FILM CONDUCTORS
ENGLISH, AT
KINSBRON, E
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 268 - 274
[6] GARGINI PA, 1982, P INT RELIABILITY PH, P66
[7] Nanda M., 1970, Electrochemical Society Fall meeting, extended abstracts, P478
[8] BULK ELECTROMIGRATION BY ELIMINATING GRAIN-BOUNDARY MASS-FLOW IN CONTINUOUS ALUMINUM LINES
SCHREIBER, HU
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (05) : 545 - 549
[9] ELECTROMIGRATION MECHANISMS IN ALUMINUM LINES
SCHREIBER, HU
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (11) : 1153 - &
[10] ELECTROMIGRATION THRESHOLD IN ALUMINUM FILMS
SCHREIBER, HU
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (06) : 617 - 626