MIXING AND CHEMICAL EFFECTS IN SIMS DEPTH PROFILING THE SI/SIO2 INTERFACE

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] AVERBACK RS, APPL PHYS A

[3] THE EFFECT OF SURFACE-TOPOGRAPHY EVOLUTION ON SPUTTER PROFILING DEPTH RESOLUTION IN SI [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 35 - 40

[4] SIMS STUDY OF THE SIO2/SI INTERFACE AND OF THE SI+O2 SYSTEM [J]. SURFACE AND INTERFACE ANALYSIS, 1983, 5 (02) : 83 - 86

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] DEPTH DISTRIBUTIONS OF LOW-ENERGY HE-4 IMPLANTED IN SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 49 - 53

[7] TEMPERATURE EFFECTS IN ATOMIC MIXING OF METAL SILICON MULTILAYERS MEASURED BY SIMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 607 - 615

[8] LITTMARK U, 1980, NUCL INSTRUM METHODS, V168, P239

[9] MASS REDISTRIBUTION BY ATOMIC MIXING IN SPUTTER DEPTH PROFILING [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 335 - 344

[10] ION-BEAM-INDUCED ATOMIC MIXING AT THE SIO2-SI INTERFACE [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 237 - 240

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140

[2] AVERBACK RS, APPL PHYS A

[3] THE EFFECT OF SURFACE-TOPOGRAPHY EVOLUTION ON SPUTTER PROFILING DEPTH RESOLUTION IN SI [J]. SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) : 35 - 40

[4] SIMS STUDY OF THE SIO2/SI INTERFACE AND OF THE SI+O2 SYSTEM [J]. SURFACE AND INTERFACE ANALYSIS, 1983, 5 (02) : 83 - 86

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] DEPTH DISTRIBUTIONS OF LOW-ENERGY HE-4 IMPLANTED IN SOLIDS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 49 - 53

[7] TEMPERATURE EFFECTS IN ATOMIC MIXING OF METAL SILICON MULTILAYERS MEASURED BY SIMS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 607 - 615

[8] LITTMARK U, 1980, NUCL INSTRUM METHODS, V168, P239

[9] MASS REDISTRIBUTION BY ATOMIC MIXING IN SPUTTER DEPTH PROFILING [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 335 - 344

[10] ION-BEAM-INDUCED ATOMIC MIXING AT THE SIO2-SI INTERFACE [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 237 - 240