ALLOYING OF AL-CU-SI METALLIZATION BY RAPID THERMAL ANNEALING

被引：5

作者：

ALVI, NS ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV TEXAS, DEPT ELECT & COMP ENGN, MICROELECTR RES CTR, AUSTIN, TX 78712 USA

来源：

关键词：

D O I：

10.1109/EDL.1986.26320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 139

页数：3

共 7 条

[1] ELIMINATION OF HILLOCKS ON AL-SI METALLIZATION BY FAST-HEAT-PULSE ALLOYING
FAITH, TJ
WU, CP
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 470 - 472
[2] GHATE PB, 1981, P 19 INT REL PHYS S, P243
[3] CONTACT RESISTANCE OF AL/SI OHMIC ELECTRODES FORMED BY RAPID LAMP SINTERING
HARA, T
SUZUKI, H
FURUKAWA, M
AMEMIYA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L340 - L342
[4] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS
NAGUIB, HM
HOBBS, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 573 - 577
[5] RAPID THERMAL ANNEALING OF AL-SI CONTACTS
PAI, CS
CABREROS, E
LAU, SS
SEIDEL, TE
SUNI, I
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 652 - 654
[6] Poate J M, 1978, THIN FILMS INTERDIFF
[7] A DIRECT MEASUREMENT OF INTERFACIAL CONTACT RESISTANCE
PROCTOR, SJ
LINHOLM, LW
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 294 - 296