RAPID THERMAL ANNEALING OF AL-SI CONTACTS

[1] COHEN S, 1983, INTERFACES CONTACTS, P361

[2] ELIMINATION OF HILLOCKS ON AL-SI METALLIZATION BY FAST-HEAT-PULSE ALLOYING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 470 - 472

[3] CONTACT RESISTANCE OF AL/SI OHMIC ELECTRODES FORMED BY RAPID LAMP SINTERING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L340 - L342

[4] AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1123 - 1125

[5] HUNG LS, 1984, THIN FILMS INTERFACE, V2, P253

[6] PAI CS, 1984, UNPUB THIN SOLID FIL

[7] DIRECT MEASUREMENTS OF INTERFACIAL CONTACT RESISTANCE, END CONTACT RESISTANCE, AND INTERFACIAL CONTACT LAYER UNIFORMITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1535 - 1542

[8] Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[9] SEIDEL TE, 1984, UNPUB NUCL INSTRUM B

[10] TATTA PA, 1969, IBM J RES REV, V13, P226

[1] COHEN S, 1983, INTERFACES CONTACTS, P361

[2] ELIMINATION OF HILLOCKS ON AL-SI METALLIZATION BY FAST-HEAT-PULSE ALLOYING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 470 - 472

[3] CONTACT RESISTANCE OF AL/SI OHMIC ELECTRODES FORMED BY RAPID LAMP SINTERING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L340 - L342

[4] AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1123 - 1125

[5] HUNG LS, 1984, THIN FILMS INTERFACE, V2, P253

[6] PAI CS, 1984, UNPUB THIN SOLID FIL

[7] DIRECT MEASUREMENTS OF INTERFACIAL CONTACT RESISTANCE, END CONTACT RESISTANCE, AND INTERFACIAL CONTACT LAYER UNIFORMITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1535 - 1542

[8] Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[9] SEIDEL TE, 1984, UNPUB NUCL INSTRUM B

[10] TATTA PA, 1969, IBM J RES REV, V13, P226