DEEP LEVELS IN SEMI-INSULATING LEC GAAS BEFORE AND AFTER SILICON IMPLANTATION

[11] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823

[12] A DIAGNOSTIC PATTERN FOR GAAS-FET MATERIAL DEVELOPMENT AND PROCESS MONITORING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2285 - 2291

[13] IMMORLICA AA, 1981, I PHYS C SER, V56, P423

[14] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[15] Itoh T., 1979, Japanese Journal of Applied Physics, V19, P351

[16] EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 619 - 621

[17] POINT-DEFECTS IN GAP, GAAS, AND INP [J]. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1982, 58 : 81 - 141

[18] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

[19] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193

[20] MARTIN GM, 1978, ELECTROCHEMICAL SOC, P32

[11] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823

[12] A DIAGNOSTIC PATTERN FOR GAAS-FET MATERIAL DEVELOPMENT AND PROCESS MONITORING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2285 - 2291

[13] IMMORLICA AA, 1981, I PHYS C SER, V56, P423

[14] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

[15] Itoh T., 1979, Japanese Journal of Applied Physics, V19, P351

[16] EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (20) : 619 - 621

[17] POINT-DEFECTS IN GAP, GAAS, AND INP [J]. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1982, 58 : 81 - 141

[18] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

[19] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193

[20] MARTIN GM, 1978, ELECTROCHEMICAL SOC, P32