MO2N/MO GATE MOSFETS

[1] MO GATE TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1302 - 1307

[2] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[3] BROWN DM, 1968, SOLID STATE ELECTRON, V2, P1105

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[5] MOLYBDENUM NITRIDE FILM FORMATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1196 - 1200

[6] KIM MJ, 1982, FAL ECS M, P371

[7] MILLER NE, 1979, SOL STAT TECH DEC

[8] ION-IMPLANTATION MASKING ABILITY DEGRADATION IN HIGH-TEMPERATURE ANNEALED MO FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1121 - 1127

[9] HYDROGEN ANNEAL EFFECTS ON METAL-SEMICONDUCTOR WORK FUNCTION DIFFERENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 806 - 810

[10] ONE-MICRON POLYCIDE (WSI2 ON POLY-SI) - MOSFET TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) : 2207 - 2214

[1] MO GATE TETRODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1302 - 1307

[2] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[3] BROWN DM, 1968, SOLID STATE ELECTRON, V2, P1105

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[5] MOLYBDENUM NITRIDE FILM FORMATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1196 - 1200

[6] KIM MJ, 1982, FAL ECS M, P371

[7] MILLER NE, 1979, SOL STAT TECH DEC

[8] ION-IMPLANTATION MASKING ABILITY DEGRADATION IN HIGH-TEMPERATURE ANNEALED MO FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1121 - 1127

[9] HYDROGEN ANNEAL EFFECTS ON METAL-SEMICONDUCTOR WORK FUNCTION DIFFERENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 806 - 810

[10] ONE-MICRON POLYCIDE (WSI2 ON POLY-SI) - MOSFET TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (10) : 2207 - 2214