ABSORPTION-COEFFICIENT OF BETA-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

SOLANGI, A

CHAUDHRY, MI

机构：

[1] Department of Electrical and Computer Engineering, Clarkson University, Potsdam

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 03期

关键词：

D O I：

10.1557/JMR.1992.0539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The absorption coefficient of beta-SiC is measured by the transmission technique. Beta-SiC films are grown on Si substrates by chemical vapor deposition using a buffer layer between beta-SiC and the substrate. The absorption coefficient value ranges from 10 to 5.5 x 10(4) cm-1 in the energy range between 2.42 and 4.4 eV. The bandgap of beta-SiC films investigated in this study ranges between 2.13 and 2.32 eV.

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页码：539 / 541

页数：3

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