COPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANE

被引：22

作者：

CHIOU, JC ^{[1
]}

CHEN, YJ ^{[1
]}

CHEN, MC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 04期

关键词：

COPPER CHEMICAL VAPOR DEPOSITION SELECTIVE DEPOSITION; DEPOSITION MECHANISM; DEPOSITION PARAMETERS; METALLIZATION;

D O I：

10.1007/BF02671218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper chemical vapor deposition using Cu-hexafluoroacetylacetonate (hfac) trimethylvinylsilane (TMVS) as precursor was performed in a cold-wall low pressure chemical vapor deposition (CVD) reactor. The design and operation of the reactor are described. Copper deposition on thermal SiO2, W, and CoSi2 substrate surfaces was investigated over the temperature range of 160-300-degrees-C and pressure range of 10-1000 mTorr. The activation energies of Cu CVD were determined to be 13.33 and 11.54 kcal/mole for the W and CoSi2 substrates, respectively. The dependence of film resistivity, grain size, and growth rate on deposition pressure and temperature were also investigated. The film uniformity was found to be better than ten percent over a 4-inch diameter substrate. Experimental results also show that selective deposition can be achieved at a pressure of 10 mTorr within the temperature range of 160-200-degrees-C. In addition, hydrofluoric acid dipping was found to modify the SiO2 surface and influence the copper deposition on it.

引用

页码：383 / 390

页数：8

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