SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED FILMS OF A1XOYNZ ON SILICON

被引：27

作者：

IRENE, EA ^{[1
]}

SILVESTRI, VJ ^{[1
]}

WOOLHOUSE, GR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,POB 218,YORKTOWN HEIGHTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 03期

关键词：

D O I：

10.1007/BF02666227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：409 / 427

页数：19

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[5] GROWTH CHARACTERISTICS OF A1N FILMS PYROLYTICALLY DEPOSITED ON SI [J].

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ING, DW .

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[6] CHEMICAL VAPOR-DEPOSITION OF ALXOYNZ FILMS [J].

SILVESTRI, VJ ;

IRENE, EA ;

ZIRINSKY, S ;

KUPTSIS, JD .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) :429-444

[7]

TORKAR K, 1960, MONATSH CHEM, V91, P659

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