ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MBE USING P+ ION-BEAM

被引:3
作者
MORISHITA, Y [1 ]
MARUNO, S [1 ]
ISU, T [1 ]
NOMURA, Y [1 ]
OGATA, H [1 ]
KURAMOTO, K [1 ]
机构
[1] MITSUBISHI ELECT CORP,MAT & ELECTR DEVICES LAB,AMAGASAKI,HYOGO 661,JAPAN
关键词
D O I
10.1016/0022-0248(88)90278-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
8
引用
收藏
页码:215 / 220
页数:6
相关论文
共 8 条
  • [1] ASHCROFT NW, 1981, SOLID STATE PHYSICS, P571
  • [2] AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP
    EAVES, L
    SMITH, AW
    SKOLNICK, MS
    COCKAYNE, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4955 - 4963
  • [3] PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    KAWAMURA, Y
    IKEDA, M
    ASAHI, H
    OKAMOTO, H
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 481 - 484
  • [4] MOLECULAR-BEAM EPITAXY OF INP USING LOW-ENERGY P+ ION-BEAM
    MARUNO, S
    MORISHITA, Y
    ISU, T
    NOMURA, Y
    OGATA, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 338 - 343
  • [5] SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE
    NORRIS, MT
    STANLEY, CR
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 617 - 620
  • [6] HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES
    ROBERTS, JS
    DAWSON, P
    SCOTT, GB
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 905 - 907
  • [7] A MOLECULAR AND ION-BEAM EPITAXY SYSTEM FOR THE GROWTH OF III-V-COMPOUND SEMICONDUCTORS USING A MASS-SEPARATED, LOW-ENERGY GROUP-V ION-BEAM
    SHIMIZU, S
    TSUKAKOSHI, O
    KOMIYA, S
    MAKITA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1130 - 1140
  • [8] INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY
    WILLIAMS, EW
    ELDER, W
    ASTLES, MG
    WEBB, M
    MULLIN, JB
    STRAUGHAN, B
    TUFTON, PJ
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1741 - 1749