TRANSFORM BASED PROXIMITY CORRECTIONS - EXPERIMENTAL RESULTS AND COMPARISONS

被引：15

作者：

HASLAM, ME

MCDONALD, JF

机构：

[1] Rensselaer Polytechnic Inst, Troy,, NY, USA, Rensselaer Polytechnic Inst, Troy, NY, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LITHOGRAPHY

引用

页码：168 / 175

页数：8

共 9 条

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[2] AN IMAGE-PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY
CHOW, DGL
MCDONALD, JF
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[4] EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS
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[5] 2-DIMENSIONAL HAAR THINNING FOR DATA-BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY
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MCDONALD, JF
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BOURGEOIS, M
CHOW, DGL
STECKL, AJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 165 - 173
[6] KERN DP, 1980, 9TH P INT C EL ION B
[7] APPLICATION OF THE GHOST PROXIMITY EFFECT CORRECTION SCHEME TO ROUND BEAM AND SHAPED BEAM ELECTRON LITHOGRAPHY SYSTEMS
OWEN, G
RISSMAN, P
LONG, MF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 153 - 158
[8] PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE
OWEN, G
RISSMAN, P
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3573 - 3581
[9] PARIKH M, 1978, 8TH P INT C EL ION B, P371