DISLOCATIONS IN GAAS PRODUCED BY DEVICE FABRICATION

[1] COX RH, 1968, ELECTROCHEM SOC M MO

[2] LIFETIME LIMITATION OF HIGH-FIELD GAAS DEVICES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (09) : 1369 - 1370

[3] CONTRIBUTION TO ETCH POLISHING OF GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) : 1061 - 1063

[4] DEGRADATION OF A GUNN DIODE BY DISLOCATIONS INDUCED DURING THERMOCOMPRESSION BONDING [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 107 - &

[5] JONES CE, 1965, ELECTR COMMUN JPN, V112, P908

[6] MECHANICALLY INDUCED SURFACE DAMAGE IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1200 - &

[7] INFLUENCE OF THERMOCOMPRESSION ON GAAS CRYSTAL FOR GUNN DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) : 603 - &

[8] MULLIN B, 1973, PRIVATE COMMUNICATIO

[9] EFFECTS OF DIFFUSION-INDUCED DISLOCATIONS ON EXCESS LOW-FREQUENCY NOISE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 221 - 226

[10] Osvenskii V. B., 1973, Soviet Physics - Solid State, V15, P661

[1] COX RH, 1968, ELECTROCHEM SOC M MO

[2] LIFETIME LIMITATION OF HIGH-FIELD GAAS DEVICES [J]. PROCEEDINGS OF THE IEEE, 1973, 61 (09) : 1369 - 1370

[3] CONTRIBUTION TO ETCH POLISHING OF GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) : 1061 - 1063

[4] DEGRADATION OF A GUNN DIODE BY DISLOCATIONS INDUCED DURING THERMOCOMPRESSION BONDING [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 107 - &

[5] JONES CE, 1965, ELECTR COMMUN JPN, V112, P908

[6] MECHANICALLY INDUCED SURFACE DAMAGE IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1200 - &

[7] INFLUENCE OF THERMOCOMPRESSION ON GAAS CRYSTAL FOR GUNN DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) : 603 - &

[8] MULLIN B, 1973, PRIVATE COMMUNICATIO

[9] EFFECTS OF DIFFUSION-INDUCED DISLOCATIONS ON EXCESS LOW-FREQUENCY NOISE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 221 - 226

[10] Osvenskii V. B., 1973, Soviet Physics - Solid State, V15, P661