ANNEALING OF TOTAL DOSE DAMAGE - REDISTRIBUTION OF INTERFACE STATE DENSITY ON (100), (110) AND (111) ORIENTATION SILICON

被引：43

作者：

STAHLBUSH, RE

LAWRENCE, RK

HUGHES, HL

SAKS, NS

机构：

[1] ARACOR,SUNNYVALE,CA

[2] DEF NUCL AGCY,WASHINGTON,DC

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

Activation Energy - Interfacial Radiation Effects - Semiconductor Device Thermal Factors;

D O I：

10.1109/23.25438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1192 / 1196

页数：5

共 21 条

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