2ND-GENERATION 12L-MTL - 20-NS PROCESS-STRUCTURE

被引：31

作者：

HERMAN, JM ^{[1
]}

EVANS, SA ^{[1
]}

SLOAN, BJ ^{[1
]}

机构：

[1] TEXAS INSTR INC,SEMICOND RES & ENGN LABS,DALLAS,TX 75222

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1109/JSSC.1977.1050854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：93 / 101

页数：9

相关论文

共 18 条

[1] MERGED-TRANSISTOR LOGIC (MTL) - LOW-COST BIPOLAR LOGIC CONCEPT
BERGER, HH
WIEDMANN, SK
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 340 - &
[2] TERMINAL-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL)
BERGER, HH
WIEDMANN, SK
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 211 - 217
[3] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES
BUEHLER, MG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +
[4] CHAMBERLIN LA, 1976, SBP9900 MICROPROCESS
[5] DIODE EDGE EFFECT ON DOPING-PROFILE MEASUREMENTS
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) : 404 - &
[6] INTEGRATED INJECTION LOGIC - PRESENT AND FUTURE
DETROYE, NC
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 206 - 211
[7] ELECTRICAL-PROPERTIES OF I2L N-P-N TRANSISTOR
EVANS, SA
HERMAN, JM
SLOAN, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) : 1192 - 1194
[8] EVANS SA, 1975, MAY EL SOC M, P394
[9] INTEGRATED INJECTION LOGIC - NEW APPROACH TO LSI
HART, K
SLOB, A
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 346 - &
[10] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
PANOUSIS, PT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &