ELECTRICAL-PROPERTIES OF I2L N-P-N TRANSISTOR

被引：5

作者：

EVANS, SA ^{[1
]}

HERMAN, JM ^{[1
]}

SLOAN, BJ ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 10期

关键词：

D O I：

10.1109/T-ED.1976.18573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1192 / 1194

页数：3

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