THE DEPOSITION OF ALUMINUM THIN-FILMS BY CVD USING A NOVEL ADDUCT OF DIMETHYLALUMINUM HYDRIDE

被引：7

作者：

JONES, AC ^{[1
]}

HOULTON, D ^{[1
]}

RUSHWORTH, SA ^{[1
]}

FLANGAN, JA ^{[1
]}

BROWN, JR ^{[1
]}

CRITCHLOW, GW ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

CHEMICAL VAPOR DEPOSITION | 1995年 / 1卷 / 01期

关键词：

D O I：

10.1002/cvde.19950010104

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe(2)AlH(Nme(2)Et), has been used for the CVD of high purity aluminum in the temperature range 250-350 degrees C. In contrast to currently available precursors it is a free flowing and non-pyrophoric liquid, making it less hazardous and more convenient for use in CVD.

引用

页码：24 / &

共 22 条

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