INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON-MICROSCOPY

被引：5

作者：

ASEEV, AL

VASIN, OI

STENIN, SI

SOLDATENKO, NN

TKHORIK, YA

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

[2] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

关键词：

D O I：

10.1016/0040-6090(75)90306-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：73 / 82

页数：10

共 26 条

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