VISIBLE PHOTOLUMINESCENCE FROM HE-IMPLANTED SILICON

被引：8

作者：

BISERO, D

COMI, F

NOBILI, C

TONINI, R

OTTAVIANI, G

MAZZOLENI, C

PAVESI, L

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[2] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

[3] INFM,I-38050 TRENT,ITALY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Visible photoluminescence has been observed at cryogenic temperatures from crystalline Si bombarded with He and exposed to H either as plasma or gas in the 250-450 degrees C temperature range. The experimental results are consistent with the formation of Si nanoparticles produced by He segregation, which is responsible for exciton localization, and H passivation of the nonradiative recombination centers. (C) 1995 American Institute of Physics.

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页码：3447 / 3449

页数：3

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