HIGH-BARRIER SCHOTTKY DIODES ON N-TYPE SI(100) DUE TO HYDROGEN PLASMA

被引：8

作者：

IWAKURO, H ^{[1
]}

INOUE, T ^{[1
]}

KURODA, T ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

HYDROGEN PLASMA; PLASMA TREATMENT; SCHOTTKY BARRIER DIODE; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1143/JJAP.30.L255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics of Al/Si diodes exposed to hydrogen-containing plasmas have been measured. The Schottky barrier heights increase compared with that of a control diode. The Schottky barrier height increases consistently with an increase in an applied rf power or hydrogen concentration in the plasma. Furthermore, the Si surface exposed to argon or hydrogen plasma has been observed by X-ray photoelectron spectroscopy. It is concluded that exposure of the Si surface to hydrogen plasma produced a hydrogenated amorphous layer in the Si substrate. Therefore, the increase in the Schottky barrier height is attributed to the formation of the Schottky barrier at the interface between the Al metal and the hydrogenated amorphous layer.

引用

页码：L255 / L257

页数：3

共 6 条

[1] EFFECT OF ANNEALING ON THE SCHOTTKY-BARRIER HEIGHT OF AL/N-SI SCHOTTKY DIODES AFTER AR+ ION-BOMBARDMENT [J].