EFFECT OF ANNEALING ON THE SCHOTTKY-BARRIER HEIGHT OF AL/N-SI SCHOTTKY DIODES AFTER AR+ ION-BOMBARDMENT

被引：11

作者：

CARR, BA

FRIEDLAND, E

MALHERBE, JB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4775 / 4777

页数：3

共 13 条

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[8]

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