EFFECT OF AR+ ION-BOMBARDMENT ON THE ELECTRICAL CHARACTERISTICS OF AL/N-SI CONTACTS

被引：11

作者：

CARR, BA

FRIEDLAND, E

MALHERBE, JB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.338927

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2566 / 2570

页数：5

共 20 条

[1] ROLE OF METAL-SEMICONDUCTOR INTERFACE IN SILICON INTEGRATED-CIRCUIT TECHNOLOGY [J].

ANDREWS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :972-984

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[3] IN-DEPTH AUGER ANALYSIS OF ALUMINIUM-SILICON INTERFACIAL REACTIONS [J].

CARD, HC ;

SINGER, KE .

THIN SOLID FILMS, 1975, 28 (02) :265-268

[4]

CARR BA, 1986, THESIS U PRETORIA

[5]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[6] AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING [J].

HUNG, LS ;

MAYER, JW ;

ZHANG, M ;

WOLF, ED .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1123-1125

[7] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J].

MANNING, I ;

MUELLER, GP .

COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) :85-94

[8]

MANNING I, 1976, COMPUT PHYS COMMUN, V12, P339

[9] ADAPTATION OF A PROGRAM FOR DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT - CALCULATION OF ION LATERAL RANGES [J].

MANNING, I ;

ROSEN, M ;

WESTMORELAND, JE .

COMPUTER PHYSICS COMMUNICATIONS, 1976, 12 (03) :335-338

[10] ION MIXING [J].

MATTESON, S ;

NICOLET, MA .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :339-362

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