ELECTROREFLECTANCE SPECTROSCOPY OF SI-GEXSI1-X QUANTUM-WELL STRUCTURES

被引：92

作者：

PEARSALL, TP

POLLAK, FH

BEAN, JC

HULL, R

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] POLYTECH UNIV,CTR ADV TECHNOL TELECOMMUN,BROOKLYN,NY 11201

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.6821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6821 / 6830

页数：10

共 30 条

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[7] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES
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[8] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS
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[9] ELECTRONIC STATES AND THICKNESSES OF GAAS/GAALAS QUANTUM WELLS AS MEASURED BY ELECTROREFLECTANCE AND SPECTROSCOPIC ELLIPSOMETRY
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) : 3241 - 3249
[10] GLEMBOCKI OJ, 1985, P SOC PHOTO-OPT INST, V524, P86, DOI 10.1117/12.946323

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