ELIMINATION OF SLIP LINES IN CAPLESS RAPID THERMAL ANNEALING OF GAAS

被引：6

作者：

GOFF, MJ

WANG, SC

YU, TH

机构：

来源：

JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 05期

关键词：

D O I：

10.1557/JMR.1988.0911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：911 / 913

页数：3

共 8 条

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SZWEDA, R .

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SEALY, BJ .

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[3] RAPID THERMAL ANNEALING OF SI IMPLANTED GAAS FOR POWER FIELD-EFFECT TRANSISTORS [J].

KANBER, H ;

HENDERSON, WB ;

RUSH, RC ;

SIRACUSA, M ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :120-122

[4]

LEGGE RN, 1986, SPIE ADV PROCESS C 3, V623, P163

[5]

LESTER T, 1986 EL MAT C

[6] RAPID THERMAL ANNEALING OF MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR DEVICE APPLICATIONS [J].

PEARAH, P ;

HENDERSON, T ;

KLEM, J ;

MORKOC, H ;

NILSSON, B ;

WU, O ;

SWANSON, AW ;

CHEN, DR .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1851-1855

[7]

PEARTON SJ, 1985, J ELECTROCHEM SOC, V132, P2747

[8]

YU T, 1987, P MATER RES SOC, V92, P411

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