RAPID THERMAL ANNEALING OF SI IMPLANTED GAAS FOR POWER FIELD-EFFECT TRANSISTORS

被引：14

作者：

KANBER, H ^{[1
]}

HENDERSON, WB ^{[1
]}

RUSH, RC ^{[1
]}

SIRACUSA, M ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 02期

关键词：

D O I：

10.1063/1.96289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：120 / 122

页数：3

共 14 条

[1] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[2] CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE [J].

EU, V ;

FENG, M ;

HENDERSON, WB ;

KIM, HB ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :473-475

[3] STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS [J].

FENG, M ;

KWOK, SP ;

EU, V ;

HENDERSON, BW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2990-2993

[4] HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION-IMPLANTATION [J].

FENG, M ;

KANBER, H ;

EU, VK ;

SIRACUSA, M .

ELECTRONICS LETTERS, 1982, 18 (25-2) :1097-1098

[5] STUDY OF MANGANESE ACCUMULATION IN ION-IMPLANTED GAAS INFLUENCED BY FERMI ENERGY AND ANNEALING TECHNIQUE [J].

KANBER, H ;

FENG, M ;

WHELAN, JM .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :347-352

[6] REDISTRIBUTION OF MANGANESE AFTER ANNEALING OF GAAS IMPLANTED WITH SI+ AND SE+ [J].

KANBER, H ;

FENG, M ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :960-962

[7]

KANBER H, UNPUB

[8]

KANBER H, 1984, 26TH EL MAT C SANT B

[9]

KANBER H, 1984, MATER RES SOC S P, V27, P365

[10]

KIM HB, 1979, 7TH P BIENN CORN EL, P121

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