HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION-IMPLANTATION

被引：5

作者：

FENG, M

KANBER, H

EU, VK

SIRACUSA, M

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 25-2期

关键词：

D O I：

10.1049/el:19820749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1097 / 1098

页数：2

共 6 条

[1] MONOLITHIC MICROWAVE-AMPLIFIERS FORMED BY ION-IMPLANTATION INTO LEC GALLIUM-ARSENIDE SUBSTRATES [J].

DRIVER, MC ;

WANG, SK ;

PRZYBYSZ, JX ;

WRICK, VL ;

WICKSTROM, RA ;

COLEMAN, ES ;

OAKES, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :191-196

[2] GAAS MICROWAVE-POWER FET [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :388-394

[3] GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE [J].

FURUTSUKA, T ;

HIGASHISAKA, A ;

AONO, Y ;

TAKAYAMA, Y ;

HASEGAWA, F .

ELECTRONICS LETTERS, 1979, 15 (14) :417-418

[4] DEPENDENCE OF GAAS POWER MESFET MICROWAVE PERFORMANCE ON DEVICE AND MATERIAL PARAMETERS [J].

MACKSEY, HM ;

ADAMS, RL ;

MCQUIDDY, DN ;

SHAW, DW ;

WISSEMAN, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :113-122

[5] GAAS POWER MESFETS PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SHINO, T ;

YANAGAWA, S ;

YAMADA, Y ;

ARAI, K ;

KAMEI, K ;

CHIGIRA, T ;

NAKANISI, T .

ELECTRONICS LETTERS, 1981, 17 (20) :738-739

[6] HIGH-POWER GAAS FET PREPARED BY MOLECULAR-BEAM EPITAXY [J].

WATAZE, M ;

MITSUI, Y ;

SHIMANOE, T ;

NAKATANI, M ;

MITSUI, S .

ELECTRONICS LETTERS, 1978, 14 (24) :759-761

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