ISOTROPIC PLASMA-ETCHING OF DOPED AND UNDOPED SILICON DIOXIDE FOR CONTACT HOLES AND VIAS

被引：4

作者：

VANDENHOEK, WGM

WICKER, TE

WESTLUND, BF

POWELL, GB

机构：

[1] SIGNET CO,SUNNYVALE,CA 94088

[2] MATRIX INTEGRATED SYST INC,RICHMOND,CA 94806

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575863

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：670 / 675

页数：6

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