MECHANISM OF PHOSPHORUS PILE-UP IN THE SI-SIO2 INTERFACE

被引：19

作者：

KIMURA, T

HIROSE, M

OSAKA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：932 / 935

页数：4

共 11 条

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[8] OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON [J].

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[9]

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[10]

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