DEPOSITION OF ALUMINUM THIN-FILMS BY PHOTOCHEMICAL SURFACE-REACTION

被引：32

作者：

HANABUSA, M

OIKAWA, A

CAI, PY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3268 / 3274

页数：7

共 22 条

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

AOYAGI, Y ;

DOI, A ;

IWAI, S ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1460-1464

[2] THE GROWTH AND CHARACTERIZATION OF AIGAAS USING DIMETHYL ALUMINUM-HYDRIDE [J].

BHAT, R ;

KOZA, MA ;

CHANG, CC ;

SCHWARZ, SA ;

HARRIS, TD .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :7-10

[3] LASER PROJECTION PATTERNED ALUMINUM METALLIZATION FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

BLONDER, GE ;

HIGASHI, GS ;

FLEMING, CG .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :766-768

[4] LASER DIRECT WRITING OF ALUMINUM CONDUCTORS [J].

CACOURIS, T ;

SCELSI, G ;

SHAW, P ;

SCARMOZZINO, R ;

OSGOOD, RM ;

KRCHNAVEK, RR .

APPLIED PHYSICS LETTERS, 1988, 52 (22) :1865-1867

[5] TIME-RESOLVED SPECTROSCOPIC STUDIES OF THE ULTRAVIOLET-LASER PHOTOLYSIS OF AL ALKYLS FOR FILM GROWTH [J].

ERES, D ;

MOTOOKA, T ;

GORBATKIN, S ;

LUBBEN, D ;

GREENE, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :848-852

[6]

GLANG R, 1970, HDB THIN FILM TECHNO, pCH2

[7] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

GREEN, ML ;

LEVY, RA ;

NUZZO, RG ;

COLEMAN, E .

THIN SOLID FILMS, 1984, 114 (04) :367-377

[8]

Hanabusa M., 1987, Material Science Reports, V2, P51, DOI 10.1016/S0920-2307(87)80002-6

[9] PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM THIN-FILMS USING DIMETHYLALUMINUM HYDRIDE [J].

HANABUSA, M ;

HAYAKAWA, K ;

OIKAWA, A ;

MAEDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1392-L1394

[10]

HANABUSA M, IN PRESS MATERIALS R, V129

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