PHYSICAL AND ELECTRICAL CHARACTERIZATION OF A SILO ISOLATION STRUCTURE

[1] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737

[3] BOGH A, 1978, APPL PHYS LETT, V33, P895

[4] BOURRET A, 1977, APPL PHYS LETT, V30, P290

[5] CHIU KY, 1982, IEEE T ELECTRON DEV, V29, P536, DOI 10.1109/T-ED.1982.20739

[6] THE INFLUENCE OF HIGH-PRESSURE OXIDATION ON BORON REDISTRIBUTION IN LOCOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1418 - 1423

[7] DUPUY M, 1984, J MICROSC SPECT ELEC, V9, P163

[8] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[9] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[10] DEFECT CHARACTERISTICS AND GENERATION MECHANISM IN A BIRD BEAK FREE STRUCTURE BY SIDEWALL MASKED TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 190 - 196

[1] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1729 - 1737

[3] BOGH A, 1978, APPL PHYS LETT, V33, P895

[4] BOURRET A, 1977, APPL PHYS LETT, V30, P290

[5] CHIU KY, 1982, IEEE T ELECTRON DEV, V29, P536, DOI 10.1109/T-ED.1982.20739

[6] THE INFLUENCE OF HIGH-PRESSURE OXIDATION ON BORON REDISTRIBUTION IN LOCOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1418 - 1423

[7] DUPUY M, 1984, J MICROSC SPECT ELEC, V9, P163

[8] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[9] STRESS IN THERMAL SIO2 DURING GROWTH [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10

[10] DEFECT CHARACTERISTICS AND GENERATION MECHANISM IN A BIRD BEAK FREE STRUCTURE BY SIDEWALL MASKED TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 190 - 196