ATTOJOULE MOSFET LOGIC DEVICES USING LOW-VOLTAGE SWINGS AND LOW-TEMPERATURE

被引：11

作者：

TEWKSBURY, SK

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 03期

关键词：

D O I：

10.1016/0038-1101(85)90006-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 276

页数：22

共 57 条

[31]

MCCABE MM, 1982, GEC-J SCI TECHNOL, V48, P68

[32] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[33] HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].

MIMURA, T ;

JOSHIN, K ;

HIYAMIZU, S ;

HIKOSAKA, K ;

ABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600

[34]

MISHI Y, 1981, MICROELECTRON J, V12, P5

[35]

MUKHOPAKHYAY A, 1971, RECENT DEV SWITCHING, P255

[36] TEMPERATURE-DEPENDENCE OF MOSFET CHARACTERISTICS IN WEAK INVERSION [J].

NISHIDA, M ;

OHYABU, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) :1245-1248

[37] COMPUTER-ANALYSIS OF A SHORT-CHANNEL BC MOSFET [J].

OKA, H ;

NISHIUCHI, K ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1514-1520

[38] ANDERSON TRANSITION IN SILICON INVERSION LAYERS - ORIGIN OF RANDOM FIELD AND EFFECT OF SUBSTRATE BIAS [J].

PEPPER, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1977, 353 (1673) :225-246

[39] INTRODUCTION TO SILICON INVERSION LAYERS [J].

PEPPER, M .

CONTEMPORARY PHYSICS, 1977, 18 (05) :423-454

[40]

PITKIN W, 1979, PHYS STAT SOL B, V96, P617

← 1 2 3 4 5 6 →