EPITAXY OF SILICON ON NICKEL SILICIDE

被引：9

作者：

WU, SC ^{[1
]}

LI, YS ^{[1
]}

JONA, F ^{[1
]}

MARCUS, PM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.32.6956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6956 / 6958

页数：3

共 13 条

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[4]

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[5]

FOELL F, 1982, PHIL MAG A, V45, P31

[6] STRUCTURE MODELING OF METAL-SILICIDE LAYERS BY USING AXIAL AND PLANAR CHANNELING TECHNIQUES [J].

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[7]

SHIH HD, 1980, PHYS REV B, V22, P814

[8] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :429-432

[9] EPITAXIAL SILICIDES [J].

TUNG, RT ;

POATE, JM ;

BEAN, JC ;

GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

[10]

VENABLES JA, 1975, EPITAXIAL GROWTH B, P428

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