THE GROWTH-MECHANISM OF THIN OXIDE-FILMS ON SI

[21] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03): : 113 - 124

[22] ILER RW, 1979, CHEM SILICA, P210

[23] NEW RESULTS ON LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 131 - 145

[24] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 874 - &

[25] COMMENTS ON PAPER TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 820 - +

[26] THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2891 - 2896

[27] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[28] SPECTROSCOPIC EVIDENCE FOR VALENCE-ALTERNATION-PAIR DEFECT STATES IN VITREOUS SIO2 [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (06): : 513 - 530

[29] IDENTIFICATION OF MOBILE ION DURING ANODIC-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : 396 - 400

[30] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2693 - 2700

[21] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03): : 113 - 124

[22] ILER RW, 1979, CHEM SILICA, P210

[23] NEW RESULTS ON LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 131 - 145

[24] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 874 - &

[25] COMMENTS ON PAPER TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 820 - +

[26] THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2891 - 2896

[27] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[28] SPECTROSCOPIC EVIDENCE FOR VALENCE-ALTERNATION-PAIR DEFECT STATES IN VITREOUS SIO2 [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (06): : 513 - 530

[29] IDENTIFICATION OF MOBILE ION DURING ANODIC-OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : 396 - 400

[30] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2693 - 2700