DEGRADATION ANALYSIS OF LATERAL PNP TRANSISTORS EXPOSED TO X-RAY-IRRADIATION

被引：6

作者：

KATO, M

NAKAMURA, T

TOYABE, T

OKABE, T

NAGATA, M

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1513 / 1517

页数：5

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