EFFECTS OF RAPID THERMAL-PROCESSING ON THE CURRENT GAIN AND EMITTER RESISTANCE OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：7

作者：

CASTANER, LM ^{[1
]}

ASHBURN, P ^{[1
]}

WOLSTENHOLME, GR ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECTR & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of measurements of base current and emitter resistance of polysilicon emitter transistors subjected to different rapid thermal anneal processes of the interfacial layer and different emitter drive-in times are presented. It is shown that a rapid thermal anneal for temperatures of the order of 1050-degrees-C leads to devices in which the base current is essentially independent of the emitter drive-in time. The emitter resistance obtained in devices given this interface anneal is considerably lower than that in devices without the anneal, and hence the values obtained are compatible with the requirements for realizing submicrometer bipolar circuits.

引用

页码：10 / 12

页数：3

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