PICOSECOND DETERMINATION OF THE DIELECTRIC FUNCTION OF LIQUID SILICON AT 1064-NM

被引：14

作者：

LI, KD

FAUCHET, PM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1016/0038-1098(87)90032-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：207 / 209

页数：3

共 13 条

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APPLIED PHYSICS LETTERS, 1986, 48 (11) :721-723

[3] THE TEMPERATURE-DEPENDENCE OF THE REFRACTIVE-INDEX OF SILICON AT ELEVATED-TEMPERATURES AT SEVERAL LASER WAVELENGTHS [J].

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[5]

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[6] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J].

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SIFFERT, P .

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[7] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

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[8]

LIU JM, 1983, MAT RES SOC S P, V13, P3

[9]

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[10]

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