1ST INDICATIONS OF SPONTANEOUS ORDERING IN ZNSE0.50TE0.50 ALLOY

被引：13

作者：

LUO, H ^{[1
]}

SAMARTH, N ^{[1
]}

SHORT, SW ^{[1
]}

XIN, SH ^{[1
]}

FURDYNA, JK ^{[1
]}

AHRENKIEL, P ^{[1
]}

BODE, MH ^{[1
]}

ALJASSIM, MM ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe our study of II-VI alloy ZnSe0.5Te0.5 in search of spontaneous ordering. Samples were prepared by molecular beam epitaxy in a variety of structure configurations and growth temperatures, in order to scan a wide range of parameters and identify a favorable condition for ordering. Transmission electron microscopy was carried out on these samples and revealed indications of spontaneous ordering in several samples, where regions with stacking of atoms that appear to be different from the zinc-blende structure were observed. Preliminary study shows that such regions have the CuAu [i.e., the (100) superlattice] structure.

引用

收藏

页码：1140 / 1142

页数：3

相关论文

共 12 条

[1] ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228

[2] EVOLUTION OF THE BAND-GAP AND THE DOMINANT RADIATIVE RECOMBINATION CENTER VERSUS THE COMPOSITION FOR ZNSE1-XTEX ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRASIL, MJSP ;

NAHORY, RE ;

TURCOSANDROFF, FS ;

GILCHRIST, HL ;

MARTIN, RJ .

APPLIED PHYSICS LETTERS, 1991, 58 (22) :2509-2511

[3] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[4] ORDERING IN GAAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY [J].

IHM, YE ;

OTSUKA, N ;

KLEM, J ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2013-2015

[5] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

JEN, HR ;

CHERNG, MJ ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1603-1605

[6] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF INTERFACES IN ZNTE/CDSE SUPERLATTICES [J].

KEMNER, KM ;

BUNKER, BA ;

LUO, H ;

SAMARTH, N ;

FURDYNA, JK ;

WEIDMANN, MR ;

NEWMAN, KE .

PHYSICAL REVIEW B, 1992, 46 (11) :7272-7275

[7] STRUCTURE OF THE ZNSE/GAAS HETEROEPITAXIAL INTERFACE [J].

LI, D ;

GONSALVES, JM ;

OTSUKA, N ;

QIU, J ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1990, 57 (05) :449-451

[8] ATOMIC LAYER EPITAXY OF (CDTE)M(ZNTE)N-ZNTE MULTIQUANTUM WELLS ON (001)GAAS SUBSTRATE [J].

LI, J ;

HE, L ;

SHAN, W ;

CHENG, XY ;

YUAN, SX .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :736-740

[9] GROWTH AND CHARACTERIZATION OF DIGITAL ALLOY QUANTUM-WELLS OF CDSE ZNSE [J].

LUO, H ;

SAMARTH, N ;

YIN, A ;

PAREEK, A ;

DOBROWOLSKA, M ;

FURDYNA, JK ;

MAHALINGAM, K ;

OTSUKA, N ;

PEIRIS, FC ;

BUSCHERT, JR .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) :467-471

[10] CHEMICAL ORDERING IN ZN1-XFEXSE ALLOYS [J].

PARK, K ;

SALAMANCARIBA, L ;

JONKER, BT .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2302-2304