NOISE SPECTROSCOPY OF SILICON GRAIN-BOUNDARIES

[11] AN EXACT PROOF OF THE INVALIDITY OF HANDEL QUANTUM 1/F NOISE MODEL, BASED ON QUANTUM ELECTRODYNAMICS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (27): : L631 - L633

[12] EFFECT OF TRAP DISTRIBUTION ON G-R NOISE SPECTRA [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 999 - 1002

[13] SILICON BICRYSTAL GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 322 - 325

[14] DEEP-LEVEL-NOISE SPECTROSCOPY OF ION-IMPLANTED POLYSILICON THIN-FILMS [J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1958 - 1962

[15] NON-LORENTZIAN NOISE AT SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (11) : 1212 - 1215

[16] MADENACH AJ, 1987, 9TH P INT C NOIS PHY, P74

[17] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[18] MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[19] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[20] NICOLLIAN EH, 1967, BELL SYST TECH J, V46, P2019

[11] AN EXACT PROOF OF THE INVALIDITY OF HANDEL QUANTUM 1/F NOISE MODEL, BASED ON QUANTUM ELECTRODYNAMICS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (27): : L631 - L633

[12] EFFECT OF TRAP DISTRIBUTION ON G-R NOISE SPECTRA [J]. SOLID-STATE ELECTRONICS, 1982, 25 (10) : 999 - 1002

[13] SILICON BICRYSTAL GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) : 322 - 325

[14] DEEP-LEVEL-NOISE SPECTROSCOPY OF ION-IMPLANTED POLYSILICON THIN-FILMS [J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1958 - 1962

[15] NON-LORENTZIAN NOISE AT SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (11) : 1212 - 1215

[16] MADENACH AJ, 1987, 9TH P INT C NOIS PHY, P74

[17] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[18] MCWHORTER AL, 1957, SEMICONDUCTOR SURFAC, P207, DOI DOI 10.1063/1.3060496

[19] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[20] NICOLLIAN EH, 1967, BELL SYST TECH J, V46, P2019