BREAKDOWN CHARACTERISTICS OF OXIDES FORMED ON FLUORINATED SILICON SURFACES

被引：1

作者：

MARSH, J

RUZYLLO, J

机构：

[1] Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Penn State University, University Park

来源：

THIN SOLID FILMS | 1991年 / 202卷 / 02期

关键词：

D O I：

10.1016/0040-6090(91)90092-C

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The effect of silicon surface fluorination on the gate oxide breakdown characteristics was studied using three different breakdown measurement techniques: ramped voltage, constant voltage, and constant current. The ramped voltage breakdown measurement did not detect physically meaningful changes in the oxide properties from surface fluorination. The constant voltage and constant current breakdown measurements, however, detected subtle differences in the oxide dielectric integrity, seen as a degradation for the fluorinated samples.

引用

页码：221 / 226

页数：6

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