ELECTRICAL CHARACTERISTICS OF METAL CERIUM DIOXIDE SILICON STRUCTURES

被引：43

作者：

NAKAZAWA, T

INOUE, T

SATOH, M

YAMAMOTO, Y

机构：

[1] IWAKI MEISEI UNIV,DEPT ELECTR ENGN,IWAKI,FUKUSHIMA 970,JAPAN

[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

[3] HOSEI UNIV,DEPT ELECTR INFORMAT,KOGANEI,TOKYO 184,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2A期

关键词：

C-V CHARACTERISTICS; DIELECTRIC CONSTANT; MOS CAPACITOR; CERIUM DIOXIDE; SILICON;

D O I：

10.1143/JJAP.34.548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics of Au/CeO2/Si structure have been measured by means of capacitance-voltage (C-V) and conductance-voltage (G-V) methods. Single crystalline and polycrystalline CeO2 films are grown on silicon substrates using electron-beam evaporation. MOS characteristics of the samples are classified by the crystallinity of the CeO2 films rather chan by the orientation or conduction type of the Si substrate. Polycrystalline CeO2 film samples show a fine structure around the flat-band voltage in the C-V curves and injection-type hysteresis. It is clarified that the characteristics of the single crystalline CeO2 film sample are free from such undesirable properties caused by negative charge and carrier injection. Dielectric constant epsilon(r) of the CeO2 films is estimated to be around 20, which is close to the bulk value (similar to 26).

引用

收藏

页码：548 / 553

页数：6

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