PLANAR INP/INGAAS-APD WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO2

被引：8

作者：

IKEDA, M

WAKITA, K

HATA, S

KONDO, S

KANBE, H

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 02期

关键词：

D O I：

10.1049/el:19830045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：61 / 62

页数：2

共 7 条

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KANBE, H .

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[3] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

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[4]

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[5] 1.0-1.6 MU-M PLANAR AVALANCHE PHOTO-DIODE BY LPE GROWN INP/INGAAS/INP DH STRUCTURE [J].

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NAKAJIMA, K ;

KANEDA, T .

ELECTRONICS LETTERS, 1982, 18 (13) :575-577

[6] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

SUSA, N ;

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[7]

Yamaguchi J., 1962, JAPANESE J APPL PHYS, V1, P314

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