WAVELENGTH DEPENDENCE OF LASER ENHANCED PLASMA-ETCHING OF SEMICONDUCTORS

被引：13

作者：

REKSTEN, GM ^{[1
]}

HOLBER, W ^{[1
]}

OSGOOD, RM ^{[1
]}

机构：

[1] COLUMBIA UNIV,COLUMBIA RADIAT LAB,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

关键词：

LASER BEAMS - Applications - PLASMAS - Jets - ULTRAVIOLET RADIATION;

D O I：

10.1063/1.96504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet (350 nm) and visible (514 nm and 647 nm) laser light have been employed to enhance silicon etching and to perform in situ patterning in a plasma reactor containing CF//4/O//2 or NF//3 reactants. The etch rate enhancement is dependent on dopant concentration and laser wavelength. This dependence has been related to the number of photogenerated carriers on the semiconductor surface.

引用

页码：551 / 553

页数：3

共 11 条

[1]

ASHBY CIH, 1984, APPL PHYS LETT, V45, P892, DOI 10.1063/1.95404

[2]

GEE JM, 1984, P SOC PHOTO-OPT INST, V459, P132, DOI 10.1117/12.939448

[3] LASER-ENHANCED PLASMA-ETCHING OF SILICON [J].