INVESTIGATION OF THE CAF2/P-TYPE SI(100) INTERFACE BY CONDUCTANCE AND DEEP LEVEL TRANSIENT SPECTROSCOPY

被引：5

作者：

COUTURIER, G ^{[1
]}

RICARD, H ^{[1
]}

THABTI, A ^{[1
]}

BARRIERE, AS ^{[1
]}

ISHIWARA, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH SCI & ENGN,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 08期

关键词：

D O I：

10.1016/0038-1101(91)90233-O

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of the CaF2/p-type-Si(100) interface were investigated using capacitance and conductance methods and also by DLTS. It was found that the capacitance-voltage characteristics are frequency dependent. A trap density of about 10(12) cm-2 per unit area and an apparent capture cross section as large as 10(-9) cm-2 were found in the midgap region. From DLTS measurements, we found a strong energy dependence of the apparent capture cross section. The capture cross section and the density of states decrease for levels close to the valence band. Results are explained in terms of carrier transfer between traps located in the insulating material and those in the semiconductor.

引用

页码：867 / 873

页数：7

共 25 条

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